?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com fqa13n50cf rev. a1 fqa13n50cf 500v n-channel mosfet july 2007 frfet ? fqa13n50cf 500v n-channel mosfet features ? 15a, 500v, r ds(on) = 0.48 ? @v gs = 10 v ? low gate charge (typical 43nc) ? low c rss (typical 20pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability ? fast recovery body diode (typical 100ns) ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. absolute maximum ratings thermal characteristics d g s gs d to-3p n fqa series symbol parameter fqa13n50cf units v dss drain-source voltage 500 v i d drain current - continuous (t c = 25c) 15 a - continuous (t c = 100c) 9.5 a i dm drain current - pulsed (note 1) 60 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 860 mj i ar avalanche current (note 1) 15 a e ar repetitive avalanche energy (note 1) 21.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 218 w - derate above 25c 1.56 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 '' from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 0.58 c /w r js thermal resistance, case-to-sink 0.24 -- c /w r ja thermal resistance, junction-to-ambient -- 40 c /w
2 www.fairchildsemi.com fqa13n50cf rev. a1 fqa13n50cf 500v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 5.6mh, i as =15a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 15a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqa13n50cf fqa13n50cf to-3p n -- -- 30 fqa13n50c f fqa13n50cf_f109 to-3pn -- -- 30 symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.5 -- v/c i dss zero gate voltage drain current v ds = 500 v, v gs = 0 v -- -- 1 a v ds = 400 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2.0--4.0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 7.5a -- 0.43 0.48 ? g fs forward transconductance v ds = 40 v, i d = 7.5 a (note 4) -- 15 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1580 2055 pf c oss output capacitance -- 180 235 pf c rss reverse transfer capacitance -- 20 25 pf switching characteristics t d(on) turn-on delay time v dd = 250 v, i d = 15a, r g = 25 ? (note 4, 5) -- 25 60 ns t r turn-on rise time -- 100 210 ns t d(off) turn-off delay time -- 130 270 ns t f turn-off fall time -- 100 210 ns q g total gate charge v ds = 400 v, i d = 15a, v gs = 10 v (note 4, 5) -- 43 56 nc q gs gate-source charge -- 7.5 -- nc q gd gate-drain charge -- 18.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 15 a i sm maximum pulsed drain-source diode forward current -- -- 60 a v sd drain-source diode forward voltage v gs = 0 v, i s = 15 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 15 a, di f / dt = 100 a/ s (note 4) -- 100 -- ns q rr reverse recovery charge -- 0.4 -- c
3 www.fairchildsemi.com fqa13n50cf rev. a1 fqa13n50cf 500v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250us pulse test 2. t c = 25 q c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 q c 25 q c -55 q c notes : 1. v ds = 40v 2. 250 p s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 q c notes : 1. v gs = 0v 2. 250 p s pulse test 25 q c i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 25 30 35 0.5 1.0 1.5 v gs = 20v v gs = 10v note : t j = 25 q c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1020304050 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 15a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fqa13n50cf rev. a1 fqa13n50cf 500v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ q c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 7.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ q c] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100 ms 10 p s dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) notes : 1. t c = 25 q c 2. t j = 150 q c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 i d , drain current [a] t c , case temperature [ q c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1 . z t jc (t) = 0.58 q c/w max. 2 . d u ty f a cto r, d = t 1 /t 2 3 . t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fqa13n50cf rev. a1 fqa13n50cf 500v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fqa13n50cf rev. a1 fqa13n50cf 500v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
8 www.fairchildsemi.com fqa13n50cf rev. a1 fqa13n50cf 500v n-channel mosfet mechanical dimensions dimensions in millimeters to-3pn
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